These gate drivers have been designed to target the popular new dual, 100 mm x 140 mm style of IGBT modules, such as the Mitsubishi LV100 and the Infineon XHP 2, as well as silicon carbide (SiC) ...
SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...
Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...
Cree, Inc. released the industry's first all-SiC 1.7kV power module in an industry standard 62mm housing. Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an industry standard ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
Cree’s SiC (silicon carbide) 1.7-kV half-bridge module—with integrated C2M MOSFET and Z-Rec diode—exhibits an on-resistance of 8 m? and 10 times higher switching efficiency than existing Si (silicon) ...
PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the SCALE-iFlex™ LT NTC family of IGBT/SiC ...