CHANDLER, Ariz., Nov. 12, 2024 (GLOBE NEWSWIRE) -- Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems.

Microsemi Corporation announced a line of intelligent half bridge Insulated Gate Bipolar Transistor (IGBT) standard power modules, including five products that simplify system design and are each ...

Compared with GTOs and IGCTs, IGBT modules offer the advantage of easier driving due to the MOS-gate and easier cooling due to a fully isolated package. Traction, industrial drive, and pulse power ...

Microsemi Corporation announced the availability of its next-generation of 650 volt (V) non-punch through (NPT) insulated gate bipolar transistors (IGBTs), offered in 45A, 70A and 95A current ratings.

DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/b14af8/igbt_vincotech_inf) has announced the addition of the "IGBT Vincotech ...

Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems. To provide system designers with a wide range of ...