1. A research team consisting of NIMS and the Tokyo University of Science has developed the fastest electric double layer transistor using a highly ion conductive ceramic thin film and a diamond thin ...
Review and outlook of atomic layer deposition for nanoscale oxide semiconductor thin film transistor
A group of scientists from Hanyang University has published a report reviewing and discussing the outlook of atomic layer deposition (ALD) based oxide semiconductor thin film transistors (TFTs). The ...
The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...
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