Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

The ITF48IF1200HR is a new ISO247-packaged copack IGBT and diode featuring the lowest thermal resistance, lowest weight and high voltage isolated backside. The new package enables higher current and ...

Infineon has put a 650V silicon IGBT alongside a silicon carbide diode in the same TO-247 packages. “Due to a freewheeling SiC Schottky barrier diode, the CoolSiC Hybrid IGBTs perform with ...

Toshiba Electronics Europe has expanded its family of compact, integrated IGBTs with a high-speed switching device that will simplify the design and reduce the component count in cooking appliances ...

Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode. The ...

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC (Reverse ...

Diode maker Actron Technology will start constructing a new plant dedicated to producing automotive insulated gate bipolar transistors (IGBT) in Taoyuan, northern Taiwan around mid-2019. Actron's IGBT ...

IGBTs are the device of choice for high power electrical power conversion systems. These are expensive systems that put great stress on power semiconductors. Reliability is a key factor in the design ...

ROHM has developed Hybrid IGBTs that come with an integrated 650V SiC Schottky barrier diode, the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR). The devices are qualified under the ...

Six-inch foundry Mosel Vitelic and diode maker Actron Technology are revving up their collaboration on diverse automotive power chips such as low loss diode (LLD), ultra LLD (ULLD) and IGBT for new ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

SemiSouth, a little-know semiconductor firm from Mississippi, is introducing high-power silicon carbide JFETs to replace silicon IGBTs and silicon mosfets in high power inverters. The firm already ...