Santa Clara, CA and Kyoto, Japan, April 25, 2023 (GLOBE NEWSWIRE) -- Kyoto-based ROHM Semiconductor and Semikron Danfoss have been collaborating for more than ten years with regards to the ...

HEFEI, China, Oct. 01, 2022 (GLOBE NEWSWIRE) -- Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module — LSCT30PV120B9G. This new module has a very ...

Mitsubishi Electric has introduced a high voltage integrated circuit to drive igbt power modules dedicated to 400V ac lines. The M81738FP is suitable for 1200V class igbt devices and is said to have ...

PARA LIGHT Electronics Co., Ltd., a global leader in LED design and manufacturing, recently announced the launch of five 650V and 1200V IGBT discrete products aimed at applications such as servo motor ...

After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...

Santa Clara, CA and Kyoto, Japan, Nov. 07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] ...

Compared with existing NPT technology for IGBTs, SPT reduces on-state losses by 20% and switching losses by 20% - without increasing thermal resistance. When asked for their wish list for future ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

A new family of 1200V IGBTs has been optimized for lowest switching losses and smoothest turn-off in higher frequency and motor control applications. This paper will explain new approaches such as the ...