CISSOID has introduced multiple new families of power modules to its standard product range. The modules incorporate both ...
TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...
NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...
Mitsubishi launched three high current 1.2kV three phase IGBT modules at PCIM in Nuremberg, in transfer-moulded packages. Branded ‘Large DIPIPM+’, the modules include high and low-side drive ICs. “Of ...
Tapping the power of a fifth-generation, carrier-stored trench-gate bipolar-transistor (CSTBT) chip, the NFH-Series IGBT module claims to exhibit as little as 20% of the turn-off switching losses ...
IGBT module is compatible with 600V and 1200V types. An alternate approach is to use an epitaxial buffer layer chip (PT structure) that yields lower losses. However, the very thick epitaxy required ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback