IXYS has extended its range of IGBT Modules to include the industry popular “E+”Module package for 6-Pack configuration, utilizing NPT3 IGBT technology at 1200V and 1700V. This high current package ...

The "1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. The market outlook for SiC devices is promising ...

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC (Reverse ...

Mitsubishi Electric has introduced a high voltage integrated circuit to drive igbt power modules dedicated to 400V ac lines. The M81738FP is suitable for 1200V class igbt devices and is said to have ...

DUBLIN--(BUSINESS WIRE)--The "1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. The market outlook for ...

(http://www.researchandmarkets.com/research/rbrk35/infineon) has announced the addition of the "Infineon EconoPACK4 1200V IGBT4 Module - Reverse Costing Analysis ...

Microsemi Corporation announced a line of intelligent half bridge Insulated Gate Bipolar Transistor (IGBT) standard power modules, including five products that simplify system design and are each ...

HEFEI, China, Oct. 01, 2022 (GLOBE NEWSWIRE) -- Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module — LSCT30PV120B9G. This new module has a very ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V ...

IGBT module is compatible with 600V and 1200V types. An alternate approach is to use an epitaxial buffer layer chip (PT structure) that yields lower losses. However, the very thick epitaxy required ...