The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications. The new Radiation Hardened (RH) PowerMOS devices of the ...
We next take a detour from the world of bipolar transistors and enter the world of metal-oxide semiconductor field-effect (MOSFET [1]) transistors. The basic signal MOS gate is discussed, followed by ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
Power MOSFETs can experience destructive thermal effects at relatively low drain voltages and currents that are well within the traditional SOA (safe-operating-area) boundaries. For typical SOA curves ...
A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...
The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results