Unlike scaling practices in 2D NAND technology, the direct way to reduce bit costs and increase chip density in 3D NAND is by adding layers. In 2013, Samsung shipped the first V-NAND product using 24 ...
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first 256-gigabit ...
This week at the Flash Memory Summit, One Stop Systems showcased the OCP Flash Storage Array (OCP-FSA), supporting up to 500TB of Flash storage in a 2U form factor. Designed to comply with the Open ...
In a development that the company claims could meet a future demand for higher density NAND flash memory, at the VLSI Symposium in Japan today Toshiba Corp. announced a new three-dimensional memory ...
“Conventional resistive crossbar array for in-memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses ...
The world’s first 3D NAND-like DRAM is targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market; makes manufacturing and scaling memory with higher densities and capacities ...
"This is something many people thought was impossible," exclaimed Intel Senior Vice President Rob Crooke. During an invite-only press conference, Crooke along with Micron CEO Mark Durcan revealed a ...
New BG3 NVMe TM1 SSDs Offer Ultra-Compact Design Enabling Mobile Computing and IoT Devices to Be Smaller, Lighter, Faster, and More Power Efficient IRVINE, Calif.--(BUSINESS WIRE)--Toshiba America ...
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