(I also posted this in Other Hardware, 'cause I didn't know where it would get the best response.)<BR><BR>I'm writing a review of some ideas that have been proposed for nano-scale computing ...
Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...
The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...
A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University.
The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...
(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...
As the scale of artificial intelligence (AI) models grows rapidly, securing the performance of memory semiconductors has become a key issue. NAND flash, a type of memory semiconductor with much larger ...
What is NAND flash memory? NAND flash is a type of nonvolatile memory that is accessed like a mass storage device (e.g., a hard drive). A form of electronically erasable programmable readonly memory ...
Researchers at Samsung Electronics have succeeded in developing a next-generation ferroelectric-based NAND flash technology that reduces power consumption by up to 96%. As the demand for high-capacity ...
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