Electronic Design

Use Hybrid PMOS-NMOS Active Loads To Cut Substrate Noise In Differential Amplifiers

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
EDN

Radiation sensor design and applications: The LS 3N163

Wireless real-time radiation sensor networks offer the general public and those that work in high radiation areas greater protection against radiation hazards. Combined with real-time localized and ...
Nature

Analog Circuit Design Using MOS Transistors

Analog circuit design using MOS transistors represents a dynamic and rapidly evolving field that is integral to modern electronics. Exploiting the inherent advantages of MOS technology—such as ...
CRN

IBM-AMD, Intel Describe 65-nm Transistors

Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...
EDN

Intel crafts transistor with 20-nm gate length

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...