A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

System-in-package (SiP) and other advanced packaging technologies are putting more components together in tighter spaces than previously seen. Often these packages are contained in a module, which is ...

Structural irregularities in the body of an IGBT module can cause immediate or eventual electrical failure. These irregularities may be detected by three-dimensional acoustic micro imaging. A lack of ...

NORTH READING, Mass.--(BUSINESS WIRE)--Teradyne, Inc. (NYSE:TER) introduces the ETS-88TH, the latest addition to the ETS-88 product line designed to test IGBT, MOSFET, and power module devices. The ...

Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...

IGBT module is compatible with 600V and 1200V types. An alternate approach is to use an epitaxial buffer layer chip (PT structure) that yields lower losses. However, the very thick epitaxy required ...

CISSOID has introduced multiple new families of power modules to its standard product range. The modules incorporate both ...

Power Integrations has announced the launch of the SCALE-iFlex XLT family of dual-channel plug-and-play gate drivers. These devices are intended for operation of single LV100 (Mitsubishi), XHP 2 ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...

Power Integrations announced a family of gate-driver boards for Infineon EconoDual power switching modules. The family is called Scale EV, and its first member is 2SP0215F2Q0C, designed for the ...