Cable sizing in power electronics is not a mere detail, but the primary design constraint. It determines safety, efficiency, costs, and reliability. Let’s delve deeper into some concepts related to ...

A research team at at Tokyo University of Science developed a wide-band, high-sensitivity Barkhausen noise measurement system. Iron losses are divided into three components: hysteresis loss, classical ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

Wide bandgap materials such as gallium nitride (GaN) are emerging as the technology to take electronic performance to the next level. GaN-based electronic components offer a number of important ...

2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...

The technological results obtained by electric motors and batteries have required developing power conversion systems and motor control techniques capable of maximizing efficiency and reliability.

Silicon Carbide (SiC) has challenging opportunities in the semiconductor and power electronics industry for multiple applications such as electric vehicles, renewable energies, and others. Silicon ...

While the failure mechanisms in gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely studied and significant improvements made in their reliability, this field is still ...

In the rapidly evolving field of power electronics, thermal management has become a critical factor in ensuring device reliability, efficiency and longevity. In the rapidly evolving field of power ...

GaN transistors are significantly faster and smaller than silicon MOSFETs. GaN switching devices are available in two different types. Silicon power MOSFETs have not kept pace with the evolutionary ...

Amongst the various options to create an enhancement mode GaN technology, the p-gate GaN HEMT has emerged as a popular device of choice. Some challenges with the p-gate GaN HEMT Amongst the various ...

The market’s growth is propelled by the expanding integration of modern technologies and the rising use of semiconductors across industries. As stated in a report published by Straits Research, the ...