Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...

Qorvo's QSPICE now features rapid model generation for JFETs, MOSFETs, and diodes, improving circuit simulation efficiency ...

we propose an RF module that integrates a Doherty power amplifier (PA), a low noise amplifier (LNA), and a transceiver (TRX) switch. This configuration enables transmitter (TX) and receiver (RX) mode ...

Abstract: This brief presents an efficient adaptive analog temperature compensation technique that stabilizes the amplitude and phase performance of an RF attenuator over an ... biases the gate ...

Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied ...

Insight SIP, the specialist in ultra-miniature RF modules, is launching the ISP2554-HM module. This module represents a ...

Infineon has introduced Q-DPAK and TOLL package options to its lineup of 650-V CoolSiC Generation 2 (G2) MOSFETs. Leveraging G2 technology, these devices enable faster switching and lower power losses ...

AIP Publishing is excited to announce that the first issue of APL Electronic Devices, its newest open access journal, is now ...

Three candidates have come forward to purchase the BelGaN chip manufacturing site in Oudenaarde, Belgium. Two of the bidders ...

Discover the top 3 undervalued Semiconductors & Semiconductor Equipment stocks for Monday, March 10 based on AAII’s Stock ...