STMicroelectronics and Innoscience sign GaN technology development and manufacturing agreement Joint Development Agreement (JDA) on GaN technology to build the future in power electronics for AI ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si). Under the terms of the agreement, Innoscience will ...

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Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors of STMicroelectronics declared: “ST and Innoscience are both Integrated Device Manufacturers, and with this agreement we will ...