Abstract: This study introduces a breakthrough achievement of 0.1-Gb/mm2 wing-shaped high-density embedded 3-D via resistive random access memory (Via RRAM) in TSMC’s 16-nm FinFET CMOS logic process.
Abstract: This paper presents hybrid design of a Ternary Inverter (TI) circuit by integrating an Ovonic-Threshold-Switching (OTS) based Phase-Change-Memory (PCM) cell between Complementary-Metal-Oxide ...
Six women in their 70s, all married and all mothers and grandmothers, gather twice a month without fail. They credit their close-knit families to their longstanding friendships. By Katherine Rosman ...
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