In a significant leap for India’s semiconductor ambitions, the country’s first commercially packaged multi-chip module (MCM) rolled out early Wednesda.

Abstract: The series connection of insulated gate bipolar transistor (IGBT)/diode devices allows the operation at voltage levels higher than the rated voltage of one IGBT/diode. However, due to ...

NEW DELHI: The government on Tuesday approved four additional semiconductor manufacturing projects in the states of Odisha, Punjab, and Andhra Pradesh under the India Semiconductor Mission (ISM).

Abstract: A short circuit during inverter operation can result in the so-called short-circuit types 2 and 3. The short-circuit type 3 results in an interaction with several current commutations ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

Hitachi Power Semiconductor Device Ltd. (HPSD), a Hitachi group company, and Sagar Semiconductors (Sagar Semi) have inked a memorandum of understanding (MoU) to conduct joint marketing for high-power ...

Because VFDs/inverters are critical components in providing power, their operation, performance, and reliability are crucial to maintaining uninterrupted power. This application note focuses on TVS ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a 650V discrete insulated gate bipolar transistor (IGBT) “GT30J65MRB” for the power factor ...

IGBTs and IGCTs are four-layer devices that don’t look that different at first glance. But, when you ‘look under the hood’, you find that an insulated gate bipolar transistor (IGBT) and an integrated ...

Rohm’s RGWxx65C automotive IGBTs employ an integrated 650-V SiC Schottky barrier diode in the IGBT feedback block. This fast-recovery freewheeling diode has almost no recovery energy, thus minimal ...